Samsung patents memory chip repair method using shared spare lines
Samsung describes a memory device design where spare 'redundant' word lines in different layers share a single decoder circuit. This setup allows the chip to replace a defective memory line with a spare one using fewer control components.
In the filing’s own words
A memory device includes: a first cell region provided in a first layer, the first cell region including a first word line and a first redundant word line; a second cell region provided in a second layer, the second cell region including a second word line and a second redundant word line; a peripheral region provided in a third layer, the peripheral region including first decoder circuits respectively connected to the first word line and the second word line, and a second decoder circuit commonly connected to the first redundant word line and the second redundant word line; and a control circuit configured to: based on the first word line being identified as defective, replace the first word line with the first redundant word line; and based on the second word line being identified as defective, replace the second word line with the second redundant word line.
What exactly they claim (claim 1)
1 - 14. (canceled)
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- MEMORY DEVICE AND REPAIR METHOD OF THE MEMORY DEVICE
- Publication number
- US20260279484A1
- Application number
- 19674737
- Filed
- May 12, 2026
- Published
- Sep 17, 2026
- Inventors
- 2
- Claims
- 21
Classified under
G11C 29/702 Physics & computingG11C 29/781 Physics & computingG11C 29/789 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.