Samsung patents AI method to fix data errors in flash memory chips
Samsung describes a circuit that uses a machine learning model to correct data stored in memory chips. It measures specific voltage levels during the writing and erasing process to predict how data has degraded over time, allowing the device to recover the original information accurately.
In the filing’s own words
An equalizer device including processing circuitry configured to cause the equalizer device to detect a post-retention voltage of a target memory cell and at least one retention feature, the at least one retention feature including programming pulse read voltages or a post-erasure voltage, the programming pulse read voltages including voltages of the target memory cell detected between a sequence of programming pulses applied to the target memory cell, and the post-erasure voltage being a voltage of the target memory cell detected after the target memory cell is at least partially erased, generate a pre-retention voltage estimate of the target memory cell by inputting the post-retention voltage and the at least one retention feature into a trained machine learning algorithm, and recover data stored to the target memory cell based on the estimated pre-retention voltage.
What exactly they claim (claim 1)
1. An equalizer device, comprising: processing circuitry configured to cause the equalizer device to detect a post-retention voltage of a target memory cell and at least one retention feature, the at least one retention feature including programming pulse read voltages or a post-erasure voltage, the programming pulse read voltages including voltages of the target memory cell detected between a sequence of programming pulses applied to the target memory cell, and the post-erasure voltage being a voltage of the target memory cell detected after the target memory cell is at least partially erased, generate a pre-retention voltage estimate of the target memory cell by inputting the post-retention voltage and the at least one retention feature into a trained machine learning algorithm, and recover data stored to the target memory cell based on the estimated pre-retention voltage.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- ML EQUALIZER DEVICES FOR DE-NOISING INTERFERENCE BASED ON PROGRAMMING PULSE READ VOLTAGES AND POST-ERASURE VOLTAGES
- Publication number
- US20260279469A1
- Application number
- 19081123
- Filed
- Mar 17, 2025
- Published
- Sep 17, 2026
- Inventors
- 6
- Claims
- 20
Classified under
G11C 16/3404 Physics & computingG11C 16/0483 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.