Samsung patents method to fix memory read errors by adjusting voltage
Samsung has filed a patent for a method that improves how storage devices read data from memory blocks. When a read operation fails because the voltage used is incorrect, the system calculates a new optimal voltage level. It then either adjusts an existing group of voltage settings or creates a new one to ensure future reads succeed.
In the filing’s own words
A method and an apparatus for performing a read operation on a memory block of a storage device. The method includes determining an optimal read level voltage for a current memory block, based on a failure of a read operation performed on the current memory block; performing, based on the optimal read level voltage determined for the current memory block, one of: determining a recalibrated read level voltage for an existing read level cluster among one or more existing read level clusters created previously for one or more memory blocks of the storage device; and creating a new read level cluster with respect to the optimal read level voltage; and performing, based on a subsequent read operation request for the current memory block, the read operation on the current memory block based on the recalibrated read level voltage or the new read level voltage.
What exactly they claim (claim 1)
1. A method of performing a read operation on a memory block of a storage device, by at least one processor, the method comprising: determining an optimal read level voltage for a current memory block, based on a failure of a read operation performed on the current memory block due to an incompatible read level voltage applied for the read operation; performing, based on the optimal read level voltage determined for the current memory block, one of: determining a recalibrated read level voltage for an existing read level cluster among one or more existing read level clusters created previously for one or more memory blocks of the storage device; and creating a new read level cluster with respect to a new read level voltage equivalent to the optimal read level voltage for the current memory block; and performing, based on a subsequent read operation request for the current memory block, the read operation on the current memory block based on the recalibrated read level voltage or the new read level voltage.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- METHOD AND APPARATUS FOR PERFORMING READ OPERATION ON A MEMORY BLOCK OF A STORAGE DEVICE
- Publication number
- US20260277466A1
- Application number
- 19276736
- Filed
- Jul 22, 2025
- Published
- Sep 17, 2026
- Inventors
- 4
- Claims
- 20
Classified under
G06F 3/0655 Physics & computingG06F 3/0604 Physics & computingG06F 3/064 Physics & computingG06F 3/0679 Physics & computingMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.