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Samsung patents chip design with vertical metal connections

Samsung describes a method for building a semiconductor chip that uses a metal wire running straight through the silicon base. The process involves adding layers of insulating material and metal to create a specific connection point on the chip's surface.

Why it mattersThis is a routine improvement in chip manufacturing that helps connect different parts of a processor, which is standard practice for making electronics work.

In the filing’s own words

A method of manufacturing a semiconductor chip includes forming a through electrode penetrating a semiconductor substrate, forming a first insulating layer on the semiconductor substrate, the first insulating layer having a first opening exposing the through electrode, forming a first seed metal layer on a bottom surface and a side surface of the first opening, forming a first core metal layer in the first opening to cover the first seed metal layer, forming a second insulating layer on an outer portion of an upper surface of the first core metal layer, the second insulating layer having a second opening exposing a central portion of the upper surface of the first core metal layer, and forming a second conductive pad on the central portion of the upper surface of the first core metal layer and in the second opening.

What exactly they claim (claim 1)

1. A method of manufacturing a semiconductor chip, the method comprising: forming a through electrode penetrating a semiconductor substrate; forming a first insulating layer on the semiconductor substrate, the first insulating layer having a first opening exposing the through electrode; forming a first seed metal layer on a bottom surface and a side surface of the first opening; forming a first core metal layer in the first opening to cover the first seed metal layer; forming a second insulating layer on an outer portion of an upper surface of the first core metal layer, the second insulating layer having a second opening exposing a central portion of the upper surface of the first core metal layer; and forming a second conductive pad on the central portion of the upper surface of the first core metal layer and in the second opening.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
Publication number
US20260271640A1
Application number
19555381
Filed
Mar 3, 2026
Published
Sep 10, 2026
Inventors
2
Claims
20

Classified under

H10P 14/69433 Electricity & electronicsH10P 14/69215 Electricity & electronicsH10W 20/023 Electricity & electronicsH10W 20/069 Electricity & electronicsH10W 90/00 Electricity & electronicsH10W 90/792 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.