Samsung patents oxide semiconductor layer with barrier to improve device stability
Samsung describes a semiconductor structure that uses an oxide material for its main layer, sandwiched between electrodes and a gate. It adds a specific barrier layer between the oxide and an insulating layer to prevent unwanted chemical reactions during manufacturing.
In the filing’s own words
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer, a first electrode and a second electrode which are arranged apart from each other on the oxide semiconductor layer, a gate electrode arranged apart from the oxide semiconductor layer, a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode, an insulating layer arranged on a surface of the oxide semiconductor layer, wherein the surface is not in contact with the first electrode, the second electrode, and the gate insulating layer, and a barrier layer arranged between the oxide semiconductor layer and the insulating layer.
What exactly they claim (claim 1)
1. A semiconductor device comprising: an oxide semiconductor layer; a first electrode and a second electrode spaced apart from each other on the oxide semiconductor layer; a gate electrode spaced apart from the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; an insulating layer facing a surface of the oxide semiconductor layer, the surface of the oxide semiconductor layer not in contact with the first electrode, the second electrode, and the gate insulating layer; and a barrier layer between the oxide semiconductor layer and the insulating layer, and including a third element, an oxide formation energy of the third element is less than an oxide formation energy of a first element included in the oxide semiconductor layer and less than an oxide formation energy of a second element included in the insulating layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number
- US20260271337A1
- Application number
- 19371917
- Filed
- Oct 28, 2025
- Published
- Sep 10, 2026
- Inventors
- 5
- Claims
- 20
Classified under
H10D 30/6706 Electricity & electronicsH10B 12/30 Electricity & electronicsH10D 30/027 Electricity & electronicsH10D 30/6755 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.