Samsung patents semiconductor layer stack with mixed energy band gaps
Samsung describes a semiconductor device structure made of stacked layers with different electrical properties. The design uses two distinct semiconductor materials with different energy band gaps to form the active part of the chip.
In the filing’s own words
A semiconductor device includes: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type and on the first semiconductor layer; a third semiconductor layer having the first conductivity type and on the second semiconductor layer; a gate electrode on the third semiconductor layer; a semiconductor pattern on the third semiconductor layer and having the second conductivity type; an anode electrode on the semiconductor pattern; and a cathode electrode on a lower surface of the first semiconductor layer. The semiconductor pattern includes a first pattern on a lower surface of the anode electrode and including a first semiconductor material having a first energy band gap, and a second pattern between the first pattern and the third semiconductor layer, the second pattern including a second semiconductor material having a second energy band gap greater than the first energy band gap.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a first semiconductor layer having a first conductivity type; a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a second conductivity type that is different from the first conductivity type; a third semiconductor layer on the second semiconductor layer, the third semiconductor layer having the first conductivity type; a gate electrode on the third semiconductor layer; a semiconductor pattern on the third semiconductor layer, the semiconductor pattern having the second conductivity type; an anode electrode on the semiconductor pattern; and a cathode electrode on a lower surface of the first semiconductor layer, wherein the semiconductor pattern comprises: a first pattern on a lower surface of the anode electrode, the first pattern comprising a first semiconductor material having a first energy band gap; and a second pattern between the first pattern and the third semiconductor layer, the second pattern comprising a second semiconductor material having a second energy band gap greater than the first energy band gap.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE
- Publication number
- US20260271320A1
- Application number
- 19332675
- Filed
- Sep 18, 2025
- Published
- Sep 10, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10D 18/65 Electricity & electronicsH10D 18/01 Electricity & electronicsH10D 62/8325 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.