Samsung patents stacked magnetic memory design
Samsung describes a magnetic memory device where two semiconductor layers are bonded together to save space. The top layer holds the magnetic storage cells, while the bottom layer contains the transistors that control them, with the storage cells shaped to fit tightly against the connection points.
In the filing’s own words
A magnetic memory device may include a first semiconductor structure having a first bonding structure, and a second semiconductor structure disposed on the first semiconductor structure and having a second bonding structure bonded to the first bonding structure. The second semiconductor structure includes a memory structure including a first electrode layer, a magnetic tunnel junction layer, and a second electrode layer sequentially stacked on the second bonding structure, and a wiring disposed on the memory structure and connected to the second electrode layer. The first semiconductor structure includes a substrate disposed under the first bonding structure, and a transistor disposed on the substrate and electrically connected to the memory structure. The memory structure includes a first area adjacent to the wiring and a second area adjacent to the second bonding structure.
What exactly they claim (claim 1)
1. A magnetic memory device comprising: a first semiconductor structure having a first bonding structure and including a substrate under the first bonding structure, and a transistor disposed on the substrate; and a second semiconductor structure disposed on the first semiconductor structure and having a second bonding structure bonded to the first bonding structure, wherein the second semiconductor structure includes: a memory structure electrically connected to the transistor, and including a first electrode layer, a magnetic tunnel junction layer, and a second electrode layer sequentially stacked on the second bonding structure, and a wiring disposed on the memory structure and connected to the second electrode layer, wherein the memory structure includes a first area adjacent to the wiring and a second area adjacent to the second bonding structure, and wherein in a direction parallel to an upper surface of the substrate, a width of the second area is smaller than a width of the first area.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- MAGNETIC MEMORY DEVICE
- Publication number
- US20260271305A1
- Application number
- 19461986
- Filed
- Jan 28, 2026
- Published
- Sep 10, 2026
- Inventors
- 1
- Claims
- 20
Classified under
H10B 61/10 Electricity & electronicsH10B 80/00 Electricity & electronicsH10D 80/30 Electricity & electronicsH10N 50/10 Electricity & electronicsH10N 50/80 Electricity & electronicsH10W 20/213 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.