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Samsung patents chip design using two different semiconductor materials in one layer

Samsung describes a semiconductor structure that stacks two layers made of different materials between two gate electrodes. A contact structure connects to both layers, allowing the device to manage electrical flow through these distinct material zones.

Why it mattersThis is a routine improvement in chip manufacturing that helps engineers fine-tune how electricity moves through tiny transistors, potentially leading to more efficient or faster processors.

In the filing’s own words

A semiconductor device includes a first gate electrode, a second gate electrode spaced apart from the first gate electrode, a semiconductor structure between the first gate electrode and the second gate electrode, and a contact structure on the semiconductor structure, wherein the semiconductor structure includes a first semiconductor layer between the first gate electrode and the second gate electrode, and a second semiconductor layer between the first gate electrode and the first semiconductor layer, wherein a material of the first semiconductor layer is different from a material of the second semiconductor layer, and wherein the contact structure is in contact with the first semiconductor layer and the second semiconductor layer.

What exactly they claim (claim 1)

1. A semiconductor device comprising: a first gate electrode; a second gate electrode spaced apart from the first gate electrode; a semiconductor structure between the first gate electrode and the second gate electrode; and a contact structure on the semiconductor structure, wherein the semiconductor structure includes: a first semiconductor layer between the first gate electrode and the second gate electrode; and a second semiconductor layer between the first gate electrode and the first semiconductor layer, wherein a material of the first semiconductor layer is different from a material of the second semiconductor layer, and wherein the contact structure is in contact with the first semiconductor layer and the second semiconductor layer.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR STRUCTURE HAVING SEMICONDUCTOR LAYERS OF DIFFERENT MATERIALS
Publication number
US20260271273A1
Application number
19662467
Filed
Apr 29, 2026
Published
Sep 10, 2026
Inventors
2
Claims
20

Classified under

H10B 12/34 Electricity & electronicsH10B 12/053 Electricity & electronicsH10B 12/485 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.