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Samsung patents memory chip design with mixed-material electrodes

Samsung describes a structure for a memory cell that stores data using tiny capacitors. The design uses two different metal mixtures for the capacitor's bottom plate, where one part is a solid pillar and the other is a surrounding layer, both containing swapped elements to improve performance.

Why it mattersThis is a detailed engineering tweak to how memory chips are built, likely aiming to make the components more stable or efficient, though it is too technical for most users to notice directly.

In the filing’s own words

A semiconductor memory device includes a first capacitor electrode on a substrate, a second capacitor electrode on the first capacitor electrode, and a capacitor dielectric layer between the first capacitor electrode and the second capacitor electrode. The first capacitor electrode includes a conductive pillar and a first conductive pattern surrounding the conductive pillar. The first conductive pattern includes a first material doped with a second material. The conductive pillar includes the second material doped with the first material. The first material and the second material are different from each other.

What exactly they claim (claim 1)

1. A semiconductor memory device comprising: a cell transistor provided with a substrate; a first capacitor electrode on the substrate, the first capacitor electrode being electrically connected to the cell transistor; a second capacitor electrode on the first capacitor electrode; and a capacitor dielectric layer between the first capacitor electrode and the second capacitor electrode, wherein the first capacitor electrode comprises a conductive pillar and a first conductive pattern surrounding the conductive pillar, wherein the first conductive pattern comprises a first material including a first element and doped with a second element, the first element being different from the second element, wherein the conductive pillar comprises a second material including the first element and doped with the second element, and wherein the first material and the second material are different from each other.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
SEMICONDUCTOR MEMORY DEVICE
Publication number
US20260271268A1
Application number
19418514
Filed
Dec 12, 2025
Published
Sep 10, 2026
Inventors
3
Claims
20

Classified under

H10B 12/315 Electricity & electronicsH10B 12/033 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.