Samsung patents image sensor design sharing a readout node between pixels
Samsung has filed a patent for an image sensor where two adjacent light-capturing areas share a single electrical connection point called a floating diffusion region. This setup uses specific transistors to manage how light signals from both areas are read out, potentially allowing for more efficient sensor layouts.
In the filing’s own words
An image sensor includes, a substrate, a first region in the substrate, a first photoelectric conversion element (PD) in the first region, a first microlens covering the first PD, a second region in the substrate, a second PD in the second region, the second PD being directly adjacent to the first PD in a first direction in plan view, a second microlens covering the second PD, a floating diffusion region (FD) electrically connected to both the first PD and the second PD, a first transfer transistor electrically connected to the first PD and the FD, a second transfer transistor electrically connected to the second PD and the FD, a first pixel transistor, a second pixel transistor, a third pixel transistor, and a fourth pixel transistor, the first and second pixel transistors being arranged along a second direction perpendicular to the first direction in plan view, the second, third, and fourth pixel transistors being arranged along the first direction in plan view, and the second pixel transistor overlapping both the first region and the second region.
What exactly they claim (claim 1)
1. An image sensor comprising: a substrate; a first region in the substrate; a first photoelectric conversion element (PD) in the first region; a first microlens covering the first PD; a second region in the substrate; a second PD in the second region, the second PD being directly adjacent to the first PD in a first direction in plan view; a second microlens covering the second PD; a floating diffusion region (FD) electrically connected to both the first PD and the second PD; a first transfer transistor electrically connected to the first PD and the FD; a second transfer transistor electrically connected to the second PD and the FD; a first pixel transistor; a second pixel transistor; a third pixel transistor; and a fourth pixel transistor, wherein the first and second pixel transistors are arranged along a second direction perpendicular to the first direction in plan view, wherein the second, third, and fourth pixel transistors are arranged along the first direction in plan view, and wherein the second pixel transistor overlaps both the first region and the second region.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- IMAGE SENSORS
- Publication number
- US20260262306A1
- Application number
- 19652939
- Filed
- Apr 20, 2026
- Published
- Sep 3, 2026
- Inventors
- 7
- Claims
- 20
Classified under
H10F 39/8023 Electricity & electronicsH04N 25/70 Electricity & electronicsH04N 25/778 Electricity & electronicsH10F 39/8063 Electricity & electronicsH10F 39/813 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.