Samsung patents capacitor layers to boost chip reliability
Samsung describes a semiconductor capacitor design using specific oxide layers with distinct crystal structures between its electrodes. The filing details a stack of films, including a rutile-structured layer and a tetragonal dielectric, to improve electrical performance and stability.
In the filing’s own words
There is provided a semiconductor device having improved electrical characteristics and reliability. The semiconductor device includes an upper electrode, a lower electrode including a first metal element, a lower inserted electrode film disposed between the upper electrode and the lower electrode, a lower interfacial electrode film disposed between the lower inserted electrode film and the upper electrode, and a capacitor dielectric film disposed between the lower interfacial electrode film and the upper electrode. The lower inserted electrode film has a rutile structure and includes an oxide of the lower electrode, the lower interfacial electrode film has a rutile structure and includes a second metal element different from the first metal element and an oxide of the second metal element, and the capacitor dielectric film has a tetragonal crystal system and includes an oxide of a third metal element different from the second metal element.
What exactly they claim (claim 1)
1. A semiconductor device comprising: an upper electrode; a lower electrode including a first metal element; a lower inserted electrode film disposed between the upper electrode and the lower electrode, wherein the lower inserted electrode film has a rutile structure, and includes an oxide of the lower electrode; a lower interfacial electrode film disposed between the lower inserted electrode film and the upper electrode, wherein the lower interfacial electrode film has a rutile structure, and includes a second metal element different from the first metal element and an oxide of the second metal element; and a capacitor dielectric film disposed between the lower interfacial electrode film and the upper electrode, wherein the capacitor dielectric film has a tetragonal crystal system, and includes a third metal element different from the second metal element and an oxide of the third metal element.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number
- US20260262215A1
- Application number
- 19379181
- Filed
- Nov 4, 2025
- Published
- Sep 3, 2026
- Inventors
- 7
- Claims
- 20
Classified under
H10B 12/315 Electricity & electronicsH10B 12/033 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.