Samsung patents semiconductor layer that cuts light reflection to 25% or less
Samsung describes a semiconductor device featuring a stacked structure with alternating materials that have different light-bending properties. An anti-reflective layer sits on top with specific holes that align with the stack, designed to keep light reflection at 25% or lower.
In the filing’s own words
A semiconductor device may include: a semiconductor substrate; a first stacked structure on the semiconductor substrate in a first direction, the first stacked structure including first material layers and second material layers that are alternately arranged in the first direction, the first material layers and the second material layers having different refractive indices from each other, and wherein the first stacked structure includes first through holes extending through the first material layers and the second material layers in the first direction; and a first anti-reflective layer on the first stacked structure in the first direction, the first anti-reflective layer including a first anti-reflective material, and wherein the first anti-reflective layer includes first pattern holes respectively in communication with the first through holes of the first stacked structure, wherein a light reflectance of the first anti-reflective layer is 25% or less.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a semiconductor substrate; a first stacked structure on the semiconductor substrate in a first direction, the first stacked structure comprising at least one first material layer and at least one second material layer that are alternately arranged with respect to each other in the first direction, the at least one first material layer and the at least one second material layer having different refractive indices from each other, and wherein the first stacked structure includes at least one first through hole extending through the at least one first material layer and the at least one second material layer in the first direction; and a first anti-reflective layer on the first stacked structure in the first direction, the first anti-reflective layer comprising a first anti-reflective material, and wherein the first anti-reflective layer includes at least one first pattern hole respectively in communication with the at least one first through hole of the first stacked structure, wherein a light reflectance of the first anti-reflective layer is 25% or less.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number
- US20260259351A1
- Application number
- 19535792
- Filed
- Feb 10, 2026
- Published
- Sep 3, 2026
- Inventors
- 1
- Claims
- 20
Classified under
G02B 1/11 Physics & computingH10W 29/00 Electricity & electronicsH10B 12/01 Electricity & electronicsH10B 12/30 Electricity & electronicsH10B 43/35 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.