Samsung patents chip design with flat contact points for better connections
Samsung has been granted a patent for a specific layout of transistors in a semiconductor chip. The design features flat, plate-like sections on the sides of the gate that sit parallel to the chip's surface, allowing contact plugs to connect more easily to the active parts of the transistor.
In the filing’s own words
A semiconductor device includes: a gate electrode on a semiconductor substrate; a gate dielectric pattern between the gate electrode and the semiconductor substrate; a first semiconductor pattern on the semiconductor substrate adjacent to a first side of the gate electrode; and a second semiconductor pattern on the semiconductor substrate adjacent to a second side of the gate electrode, wherein the first semiconductor pattern includes: a first via part in contact with the semiconductor substrate; and a first plate part on the first via part, wherein the second semiconductor pattern includes: a second via part in contact with the semiconductor substrate; and a second plate part on the second via part, wherein each of the first and second plate parts extends lengthwise in a direction parallel to a top surface of the semiconductor substrate.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a gate electrode on a semiconductor substrate; a gate dielectric pattern between the gate electrode and the semiconductor substrate; a first semiconductor pattern on the semiconductor substrate adjacent to a first side of the gate electrode, wherein the first semiconductor pattern includes a first via part in contact with the semiconductor substrate, and a first plate part on the first via part; a second semiconductor pattern on the semiconductor substrate adjacent to a second side of the gate electrode, wherein the second semiconductor pattern includes a second via part in contact with the semiconductor substrate, and a second plate part on the second via part; a first contact plug connected to the first plate part; and a second contact plug connected to the second plate part, wherein each of the first and second plate parts extends lengthwise in a direction parallel to a top surface of the semiconductor substrate, wherein the first plate part includes a first contact region that overlaps the first contact plug, wherein the second plate part includes a second contact region that overlaps the second contact plug, wherein the first contact region has an impurity concentration greater than an impurity concentration of the first via part, and wherein the second contact region has an impurity concentration greater than an impurity concentration of the second via part.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device and an electronic system including the same
- Patent number
- US12772452B2
- Application number
- 18383532
- Filed
- Oct 25, 2023
- Granted
- Oct 20, 2026
- Inventors
- 3
- Claims
- 18
Classified under
H10B 43/40 Electricity & electronicsH10B 41/27 Electricity & electronicsH10B 41/41 Electricity & electronicsH10B 43/27 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.