Samsung patents memory chip design using silicon-germanium mix
Samsung has been granted a patent for a semiconductor device that combines a switching element with a data storage structure. The storage part uses a specific layer made of silicon and germanium mixed with a small amount of boron to help store information.
In the filing’s own words
A semiconductor device includes a switching element, and a data storage structure electrically connected to the switching element. The data storage structure includes first electrodes, a second electrode, and a dielectric layer between the first electrodes and the second electrode. The second electrode includes a compound semiconductor layer doped with an impurity element, the compound semiconductor layer includes two or more elements and includes a semiconductor material doped with the impurity element, the two or more elements include a first element and a second element, the first element is silicon (Si), and a concentration of the impurity element in the compound semiconductor layer is in a range of about 0.1 at % to about 5 at %, and a concentration of the first element in the compound semiconductor layer is in a range of about 10 at % to about 15 at %.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a switching element; and a data storage structure electrically connected to the switching element, wherein the data storage structure includes, a plurality of first electrodes; a second electrode; and a dielectric layer disposed between the plurality of first electrodes and the second electrode, wherein the second electrode includes a compound semiconductor layer doped with an impurity element, wherein the compound semiconductor layer includes two or more elements and includes a semiconductor material doped with the impurity element, wherein the two or more elements include a first element and a second element, wherein the first element is silicon (Si), the second element is germanium (Ge), and the impurity element is boron (B), and wherein a concentration of the impurity element in the compound semiconductor layer is in a range of about 0.1 at % to about 5 at %, and a concentration of the first element in the compound semiconductor layer is in a range of about 10 at % to about 15 at %.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device
- Patent number
- US12772434B2
- Application number
- 18478978
- Filed
- Sep 29, 2023
- Granted
- Oct 20, 2026
- Inventors
- 9
- Claims
- 19
Classified under
H10B 12/315 Electricity & electronicsH10B 12/01 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.