Samsung patents memory trick to fix data errors by flipping bits
This patent describes a method for memory controllers to recover data when standard error correction fails. If the first attempt to read data from nonvolatile memory is incorrect, the system reads the data again using different voltage levels and flips specific bits that are likely wrong before trying to correct the errors a second time.
In the filing’s own words
In a method of error correction code (ECC) decoding, normal read data are read from a nonvolatile memory device based on normal read voltages, and a first ECC decoding is performed with respect to the normal read data. When the first ECC decoding results in failure, flip read data are read from the nonvolatile memory device based on flip read voltages corresponding to a flip range of a threshold voltage. Corrected read data are generated based on the flip read data by inverting error candidate bits included in the flip range among bits of the normal read data, and a second ECC decoding is performed with respect to the corrected read voltage. Error correction capability may be enhanced by retrying ECC decoding based on the corrected read data when ECC decoding based on the normal read data results in failure.
What exactly they claim (claim 1)
1. A memory controller configured to control operations of a nonvolatile memory device, the memory controller comprising: a flip range setter configured to set a flip range based on distribution data indicating degeneration degree of retention characteristics of the nonvolatile memory device; a data regenerator configured to, when a first error correction code (ECC) decoding with respect to normal read data results in failure, generate corrected read data based on flip read data by inverting error candidate bits included in the flip range of a threshold voltage among bits of the normal read data, wherein the normal read data are read from the nonvolatile memory device based on normal read voltages, and the flip read data are read out from the nonvolatile memory device based on flip read voltages corresponding to the flip range; and an ECC decoder configured to perform the first ECC decoding with respect to the normal read data and perform a second ECC decoding with respect to the corrected read data when the first ECC decoding results in failure.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Method of error correction code (ECC) decoding and memory system performing the same
- Patent number
- US12770710B2
- Application number
- 18790881
- Filed
- Jul 31, 2024
- Granted
- Oct 20, 2026
- Inventors
- 5
- Claims
- 20
Classified under
G11C 29/52 Physics & computingG11C 29/021 Physics & computingG11C 29/022 Physics & computingG06F 11/1048 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.