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Samsung patents memory system that speeds up AI data lookups

Patent drawing
Patent drawing from the official filing.

Samsung has patented a memory design that splits data storage into two parts to handle large sets of AI data, known as embedding vectors. It keeps frequently used data in a fast, local buffer while storing the rest in a compressed form in slower memory, decompressing it only when needed.

Why it mattersThis design could make AI-powered features on phones and computers run faster by reducing the time spent moving large amounts of data between memory and the processor.

In the filing’s own words

A memory device including a near-memory device and a far-memory device, wherein the far-memory device stores compressed embedding vectors, the near-memory device including: a buffer to receive a request for pooling an embedding vector and output a hit or miss signal in response to the request, wherein the hit signal includes the embedding vector corresponding to the request; an address calculation circuit to calculate a starting memory address and memory size of the embedding vector in response to the miss signal; a decoding circuit to obtain a compressed embedding vector corresponding to the request from the far-memory device based on the starting memory address and memory size, and output the embedding vector corresponding to the request by decoding the compressed embedding vector; and a pooling circuit to output a pooled embedding vector by performing a pooling operation on the embedding vector.

What exactly they claim (claim 1)

1. A memory device comprising a near-memory device and a far-memory device, wherein the far-memory device stores compressed embedding vectors, the near-memory device comprising: a buffer configured to receive a request for pooling an embedding vector and to output a hit signal or a miss signal in response to the request, wherein the hit signal includes the embedding vector corresponding to the request; an address calculation circuit configured to calculate a starting memory address and a memory size of the embedding vector corresponding to the request in response to the miss signal; a decoding circuit configured to obtain a compressed embedding vector corresponding to the request from the far-memory device based on the starting memory address and the memory size, and to output the embedding vector corresponding to the request by decoding the compressed embedding vector; and a pooling circuit configured to output a pooled embedding vector by performing a pooling operation on the embedding vector, wherein the pooling circuit obtains the embedding vector from the hit signal or obtains the embedding vector from the decoding circuit, and the buffer stores embedding vectors with access frequencies higher than a pre-set value from all embedding vectors.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Near memory device, memory device, and electronic device
Patent number
US12769656B2
Application number
19013254
Filed
Jan 8, 2025
Granted
Oct 20, 2026
Inventors
2
Claims
20

Classified under

G06F 12/06 Physics & computing

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.