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Samsung patents method for detecting wafer mark coordinates

Patent drawing
Patent drawing from the official filing.

Samsung has been granted a patent for a method to detect the precise location of a reference mark on a silicon wafer during chip manufacturing. The technique involves creating specific stacked structures with stair-shaped ends around the mark and using a beam to measure its position. It then calculates and corrects for any shifts in the beam's path to ensure accurate alignment.

Why it mattersThis improves the precision of chip manufacturing by accounting for beam path changes, which helps ensure that microscopic circuits are aligned correctly on the wafer.

In the filing’s own words

A method of detecting coordinates of a mark is provided. The method includes: providing a plurality of structures and the mark on a wafer, each of the plurality of structures including a plurality of mold insulating layers and a plurality of mold sacrificial layers, which are alternately stacked, an end of each of the plurality of structures including a portion having a stair shape, and the mark being between adjacent structures among the plurality of structures; forming a photoresist layer on the plurality of structures and the mark, the photoresist layer including a portion concave toward the wafer between the adjacent structures; detecting the coordinates of the mark by irradiating a beam to the mark; determining an offset of the coordinates of the mark based on a beam path changing factor; and correcting the coordinates of the mark based on the offset.

What exactly they claim (claim 1)

1. A method of detecting coordinates of a mark, the method comprising: providing a plurality of structures and the mark on a wafer, each of the plurality of structures comprising a plurality of mold insulating layers and a plurality of mold sacrificial layers, which are alternately stacked, an end of each of the plurality of structures comprising a portion having a stair shape, and the mark being between adjacent structures among the plurality of structures; forming a photoresist layer on the plurality of structures and the mark, the photoresist layer comprising a portion concave toward the wafer between the adjacent structures; detecting the coordinates of the mark by irradiating a beam to the mark; determining an offset of the coordinates of the mark based on a beam path changing factor; and correcting the coordinates of the mark based on the offset.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Method for detecting coordinate of mark, computing system for performing the same, and lithography method
Patent number
US12769220B2
Application number
18233083
Filed
Aug 11, 2023
Granted
Oct 20, 2026
Inventors
3
Claims
16

Classified under

G03F 9/7088 Physics & computingG03F 7/039 Physics & computingG03F 7/70625 Physics & computingG03F 7/70683 Physics & computingG03F 7/706849 Physics & computing

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.