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Samsung patents chip-making machine that alternates gas flow for better coating

Patent drawing
Patent drawing from the official filing.

This patent describes a machine for coating thin layers of material onto semiconductor wafers, a key step in making computer chips. It uses a specific timing method where gas is filled into a supply unit for a short period and then released onto the wafer for a longer period, repeating this cycle to control the coating process.

Why it mattersIt offers a more precise way to apply materials during chip manufacturing, which is a routine but critical part of producing electronics.

In the filing’s own words

Substrate processing apparatuses and methods are provided. A substrate processing apparatus includes placing a first substrate on a first stage in a process chamber, placing a second substrate on a second stage in the process chamber, performing a first deposition process on the first substrate, and performing a second deposition process on the second substrate. The performing the first deposition process includes supplying the first substrate with a first gas. The performing the second deposition process includes supplying the second substrate with a second gas. The supplying the first substrate with the first gas includes alternately and repeatedly performing steps of filling a first gas supply unit with the first gas for a first time length, and supplying the first substrate with the first gas for a second time length. The second time length is greater than the first time length.

What exactly they claim (claim 1)

1. A substrate processing method, comprising: placing a first substrate on a first stage in a process chamber of a substrate processing apparatus; placing a second substrate on a second stage in the process chamber, the second stage spaced apart in at least one horizontal direction from the first stage; performing a first deposition process on the first substrate; and performing a second deposition process on the second substrate, wherein the performing the first deposition process comprises supplying the first substrate with a first gas, wherein the performing the second deposition process comprises supplying the second substrate with a second gas different from the first gas, wherein the supplying the first substrate with the first gas comprises alternately and repeatedly performing steps of: filling a first gas supply unit of the substrate processing apparatus with the first gas for a first time length, the first gas supply unit being upwardly spaced apart from the first stage; and supplying the first substrate with the first gas, that is in the first gas supply unit, for a second time length, wherein the second time length is greater than the first time length, and wherein the first gas supply unit includes: a first gas tank; a first supply line that connects the first gas tank and the process chamber to each other; a first mass flow controller (MFC) on the first supply line; and a first valve on the first supply line and between the first MFC and the process chamber.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Substrate processing apparatus and substrate processing method using the same
Patent number
US12768039B2
Application number
18647721
Filed
Apr 26, 2024
Granted
Oct 20, 2026
Inventors
7
Claims
18

Classified under

C23C 16/45523 Chemistry & metalsC23C 16/45519 Chemistry & metalsC23C 16/45557 Chemistry & metalsC23C 16/45589 Chemistry & metals
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.