Samsung patents chip design with recessed areas to improve cutting yield

1. An integrated circuit device, comprising: a semiconductor substrate including a first device region, a second device region, and a scribe line region extending between the first and second device regions, said scribe line region comprising a first edge region adjacent the first device region, a second edge region adjacent the second device region and a cutting region extending between the first and second device regions; a lower interlayer insulating layer on the first and second device regions and on the scribe line region; a first multi-level guard ring at least partially surrounding the first device region, when viewed from a plan perspective; a second multi-level guard ring at least partially surrounding the second device region, when viewed from the plan perspective; and an insulating structure including a lower insulating structure on the first and second device regions, and an upper insulating structure on the lower insulating structure, the lower insulating structure including lower insulating layers stacked on the lower interlayer insulating layer and having a recess therein, which extends between the first and second multi-level guard rings and exposes an upper surface of the lower interlayer insulating layer, wherein the recess exposing the upper surface of the lower interlayer insulating layer surrounds, in a plan view, the first device region, wherein the lower interlayer insulating layer comprises a first material having a first dielectric constant; wherein the lower insulating structure of the insulating structure comprises a second material different than the first material, the second material having a second dielectric constant lower than the first dielectric constant; and wherein a first portion of the first multi-level guard ring extends lower than the recess within the lower interlayer insulating layer, and a second portion of the first multi-level guard ring extends within the insulating structure.