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Samsung patents new chemical layer to boost 2D transistor performance

Samsung describes a method for improving tiny transistors made from thin sheets of transition metal dichalcogenides (TMDs). The invention places a specific chemical dopant layer within 3 nanometers of the transistor channel to increase electrical flow, using materials like halides or hydroxides.

Why it mattersThis technique could help make future computer chips smaller and more efficient by improving how these ultra-thin materials conduct electricity.

In the filing’s own words

A structure includes a dopant layer at or close to a channel to n-dope TMDs, wherein the dopant layer includes at least one of: at least one of halides (MX 2; M=(Ti, Zr, or Hf), X=at least one of {Cl, Br, or I}); at least one of hydroxides (M(OH) 2; M=(Ru, Os, or Ni)); Ca 4 As 4; or Zn 2 H 8 N 4 Te 2. A method for fabricating a channel includes depositing a delta-doped layer having a low dielectric constant and a band gap>0.1 eV onto a high-k layer, and n-doping a TMD layer, wherein an absolute value of ionization energy of the delta-doped layer is less than an absolute value of the electron affinity of the TMD layer, the delta-doped layer includes one of a halide, hydroxide, chalcogenide, oxide, arsenide, or multi-anion compound, and a fractional ratio of the delta-doped layer to the high-k layer is 0 to 0.3.

What exactly they claim (claim 1)

1. A structure comprising a dopant layer at or within 3 nm from a channel comprising at least one transition metal dichalcogenide to n-dope the at least one transition metal dichalcogenide, wherein the dopant layer comprises at least one of: at least one of halides represented by MX2, wherein M is Ti, Zr, or Hf, and X is at least one of CI, Br, or I.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
N-type of transition metal dichalcogenide channels via surface charge transfer from a dopant layer
Patent number
US12765285B2
Application number
18402474
Filed
Jan 2, 2024
Granted
Oct 13, 2026
Inventors
2
Claims
2

Classified under

H10P 32/19 Electricity & electronicsH10P 32/14 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.