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Samsung patents magnetic memory grid for brain-like computing

Patent drawing
Patent drawing from the official filing.

Samsung describes a grid of tiny magnetic switches designed to mimic the structure of the brain for faster data processing. Each switch uses a specific alloy to hold its magnetic state upright, allowing electrical signals to flow through horizontal and vertical wires without needing extra control transistors.

Why it mattersThis design could lead to more energy-efficient computer chips that process information in a way similar to human neural networks.

In the filing’s own words

A neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. Magnetic tunnel junction cells are located at the cell locations. Each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. Each cell includes a substrate, a seed layer overlying the substrate, and a nitride layer, overlying the seed layer, and optionally having a thickness greater than 5 Angstroms. Each cell further includes a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms. Each cell still further includes a magnetic layer overlying the templating layer, a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier. The magnetic layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA).

What exactly they claim (claim 1)

1. A neuromorphic computing array, comprising: a plurality of horizontal lines; a plurality of vertical lines intersecting the plurality of horizontal lines at a plurality of cell locations; and a plurality of magnetic tunnel junction cells located at each of the plurality of cell locations, each of the magnetic tunnel junction cells being electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines, each of the plurality of magnetic tunnel junction cells comprising: a substrate; a seed layer overlying the substrate; a nitride layer, overlying the seed layer; a templating layer, outward of the nitride layer, comprising a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms; a magnetic layer overlying the templating layer, the magnetic layer comprising a Heusler compound and exhibiting perpendicular magnetic anisotropy (PMA); a tunnel barrier outward of the magnetic layer; a magnetic layer outward of the tunnel barrier; and a capping layer outward of the magnetic layer, wherein, without the use of an intervening transistor: the seed layer of each of the plurality of magnetic tunnel junction cells is coupled to the corresponding one of the horizontal lines and the capping layer is coupled to the corresponding one of the vertical lines; and the corresponding one of the horizontal lines and the corresponding one of the vertical lines are configured to supply electrical signals to each of the plurality of magnetic tunnel junction cells.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Neuromorphic devices of heusler alloy based spin-transfer-torque magnetic tunnel junctions
Patent number
US12765271B2
Application number
18541040
Filed
Dec 15, 2023
Granted
Oct 13, 2026
Inventors
5
Claims
24

Classified under

H10N 50/80 Electricity & electronicsG06N 3/063 Physics & computingG11C 11/161 Physics & computingG11C 11/1675 Physics & computingG11C 11/54 Physics & computingH01F 10/3259 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.