Samsung patents image sensor design with shorter metal wiring
Samsung has been granted a patent for an image sensor design that uses a shorter metal wire to connect parts of the pixel structure. This layout involves two sub-pixels sharing a specific region, with the metal wiring connecting to transistors at an acute angle to reduce the overall length of the connection.
In the filing’s own words
An image sensor, including a shared pixel including two sub pixels of a 1×2 structure and sharing a floating diffusion region on each of the two sub pixels through a metal wiring, unit pixels surrounding the floating diffusion region, within the shared pixel, separated from each other by front-side deep trench isolation, and each including a photodiode, a transfer transistor adjacent to the floating diffusion region and on each of the unit pixels, a reset transistor and a selection transistor on a first unit pixel located in a first quadrant among the unit pixels, a conversion gain transistor on a second unit pixel located in a second quadrant among the unit pixels, and a source follower transistor on a third unit pixel located in a third quadrant and a fourth unit pixel located in a fourth quadrant among the unit pixels.
What exactly they claim (claim 1)
1. An image sensor, comprising: a shared pixel including two sub pixels of a 1×2 structure and sharing at least one floating diffusion region on each of the two sub pixels through a metal wiring; unit pixels surrounding the at least one floating diffusion region, within the shared pixel, separated from each other by front-side deep trench isolation, and each including a photodiode; at least one transfer transistor adjacent to the at least one floating diffusion region and on each of the unit pixels; a reset transistor and a selection transistor on a first unit pixel located in a first quadrant among the unit pixels; a conversion gain transistor on a second unit pixel located in a second quadrant among the unit pixels; and a source follower transistor on a third unit pixel located in a third quadrant and a fourth unit pixel located in a fourth quadrant among the unit pixels, wherein: the metal wiring connects the at least one floating diffusion region to a source region of the conversion gain transistor and a gate of the source follower transistor, and an acute angle is formed by the at least one floating diffusion region contacting the metal wiring.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Image sensor having a reduced length metal wiring connecting floating diffusion regions
- Patent number
- US12765092B2
- Application number
- 18408834
- Filed
- Jan 10, 2024
- Granted
- Oct 13, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10F 39/8037 Electricity & electronicsH10F 39/802 Electricity & electronicsH10F 39/811 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.