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SamsungGranted patentChips & hardwareInterest 4/10

Samsung patents image sensor design using deep nodes to connect layers

This patent describes a structure for image sensors that uses two separate substrates stacked face-to-face. It features a 'deep node,' a vertical connection that passes through the second substrate to link transistors on one side with wiring on the other.

Why it mattersThis design focuses on the internal architecture of camera chips, potentially improving how data is routed within the sensor, though the filing does not specify performance gains.

In the filing’s own words

The present disclosure relates to image sensors. An example image sensor includes a first substrate, a transmission transistor, a second substrate, multiple transistors, multiple wires, and a deep node. The first substrate includes a first side, a second side facing the first side, and a photoelectric conversion area. The transmission transistor is disposed on the first side of the first substrate. The second substrate includes a first side and a second side facing each other. The transistors are disposed on the first side of the second substrate and connected with the transmission transistor. The wires are disposed on the second side of the second substrate. The deep node penetrates the second substrate. The first side of the first substrate and the first side of the second substrate face each other. The transistors and one or more wires are connected through the deep node.

What exactly they claim (claim 1)

1. An image sensor comprising: a first substrate, wherein the first substrate includes a first side, a second side, and a photoelectric conversion area, the first side and the second side of the first substrate facing each other; a transmission transistor disposed on the first side of the first substrate; a second substrate, wherein the second substrate includes a first side and a second side facing each other; a plurality of transistors disposed on the first side of the second substrate, wherein the plurality of transistors are connected with the transmission transistor; a plurality of wires disposed on the second side of the second substrate; and a deep node, wherein the deep node penetrates the second substrate, wherein the first side of the first substrate and the first side of the second substrate face each other, and wherein the plurality of transistors disposed on the first side of the second substrate and one or more wires of the plurality of wires disposed on the second side of the second substrate are connected through the deep node.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Image sensor and manufacturing method thereof
Patent number
US12765091B2
Application number
18407163
Filed
Jan 8, 2024
Granted
Oct 13, 2026
Inventors
4
Claims
20

Classified under

H10F 39/8037 Electricity & electronicsH10F 39/026 Electricity & electronicsH10F 39/811 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.