Samsung patents semiconductor layer to boost oxide transistor performance
Samsung has been granted a patent for a specific design of a semiconductor device, often called a transistor. The invention adds a thin layer of material containing sulfur, selenium, or tellurium (known as chalcogens) to the channel of an oxide-based transistor. This layer is placed between the main channel and either the gate or the source/drain electrodes to improve how the device functions.
In the filing’s own words
Disclosed are a semiconductor device, a method of manufacturing the same, and an electronic element and an electronic apparatus each including the semiconductor device. The semiconductor device may include a substrate, a channel layer on the substrate, a first electrode and a second electrode on two opposite ends of the channel layer, respectively, and spaced apart from each other, a gate electrode on the channel layer and spaced apart from the first electrode and the second electrode, a gate dielectric material provided between the channel layer and the gate electrode, and a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a substrate; a channel layer on the substrate; a first electrode and a second electrode on two opposite ends of the channel layer, respectively, and spaced apart from each other; a gate electrode on the channel layer and spaced apart from the first electrode and the second electrode; a gate dielectric material between the channel layer and the gate electrode; and a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer, wherein the channel layer includes an oxide semiconductor compound, and wherein the chalcogen compound layer includes the oxide semiconductor compound doped with a chalcogen element.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Semiconductor device and method of manufacturing the same
- Patent number
- US12765005B2
- Application number
- 18515102
- Filed
- Nov 20, 2023
- Granted
- Oct 13, 2026
- Inventors
- 5
- Claims
- 15
Classified under
H10D 48/362 Electricity & electronicsH10D 62/80 Electricity & electronicsH10D 64/513 Electricity & electronicsH10D 99/00 Electricity & electronicsH10P 14/3436 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.