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Samsung patents vertical chip design using doped oxide channels

Samsung describes a semiconductor structure where a channel made of oxide material extends vertically between two electrodes. The design uses specific chemical ions, such as fluorine or chlorine, to modify the oxide layer for better electrical control.

Why it mattersThis filing details a specific way to build transistors that could help make computer chips more efficient or compact.

In the filing’s own words

Semiconductor devices and manufacturing methods thereof are provided. A semiconductor device includes a substrate, a lower electrode on the substrate, an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate, an upper electrode on the oxide channel, a gate insulator on a portion the oxide channel that is exposed by the lower electrode and the upper electrode, and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with ions.

What exactly they claim (claim 1)

1. A semiconductor device comprising: a substrate; a lower electrode on the substrate; an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate; an upper electrode on the oxide channel; a gate insulator on a portion of the oxide channel that is exposed by the lower electrode and the upper electrode; and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with anions selected from the group consisting of F (Fluorine), Cl (Chlorine), Br (Bromine), I (Iodine), At (Astatine), and a combination thereof.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Semiconductor device and method of manufacturing the same
Patent number
US12765001B2
Application number
18496353
Filed
Oct 27, 2023
Granted
Oct 13, 2026
Inventors
6
Claims
18

Classified under

H10D 30/6755 Electricity & electronicsH10D 30/6734 Electricity & electronicsH10D 30/6757 Electricity & electronicsH10D 30/751 Electricity & electronicsH10D 99/00 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.