Samsung patents chip design with stronger aluminum-oxygen bonds
This patent describes a semiconductor device where the gate insulating layer contains a high percentage of aluminum-oxygen bonds. The filing specifies that at least 80% of the oxygen peaks in a specific lab test must correspond to these strong bonds. It also includes a special interface layer to stop atoms from mixing and capacitor structures built on top of the channel.
In the filing’s own words
A semiconductor device has, in a gate insulating layer, in an XPS spectrum of O 1s obtained by an X-ray photoelectron spectroscopy (XPS) using a monochromatic aluminum Kα (1486.6 eV) source, a ratio (%) of an Al—O peak observed in a binding energy of about 530.3 eV to about 531.6 eV to all peaks of greater than or equal to about 80%.
What exactly they claim (claim 1)
1. A semiconductor device, comprising a substrate, first conductive lines disposed on the substrate, spaced apart from each other in a first direction, and extending in a second direction, channel structures disposed on the first conductive lines, spaced apart from each other in the first and second directions, and extending in a third direction crossing the first and second directions, gate electrodes disposed between the channel structures and extending in a first direction, a gate insulating layer disposed between a channel structure of the channel structures and a gate electrode of the gate electrodes, and capacitor structures disposed on the channel structures, wherein the gate insulating layer has a ratio (%) of an Al—O peak observed at a binding energy of about 530.3 eV to about 531.6 eV to all peaks of greater than or equal to about 80% in an XPS spectrum of O 1s obtained by an X-ray photoelectron spectroscopy (XPS) using a monochromatic aluminum Kα (1486.6 eV) source.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device with a gate insulating layer having increased Al—O bond energy, a diffusion-supressing interface layer between a gate insulating layer and a channel structure, and capacitor structures on channel structures
- Patent number
- US12764968B2
- Application number
- 18436574
- Filed
- Feb 8, 2024
- Granted
- Oct 13, 2026
- Inventors
- 6
- Claims
- 17
Classified under
H10B 53/20 Electricity & electronicsH10B 51/10 Electricity & electronicsH10B 51/20 Electricity & electronicsH10B 53/10 Electricity & electronicsH10D 30/0415 Electricity & electronicsH10D 30/701 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.