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Samsung patents 3D ferroelectric memory stack

Patent drawing
Patent drawing from the official filing.

Samsung has been granted a patent for a 3D memory device that stacks multiple layers of insulating material on a base. It uses a ferroelectric layer, which holds an electric charge, positioned between gate electrodes and a channel layer to store data.

Why it mattersThis design could lead to memory chips that retain data without power, potentially improving energy efficiency for devices that need to stay on for long periods.

In the filing’s own words

Provided is a three-dimensional (3D) ferroelectric memory device. The 3D ferroelectric memory device includes a substrate, a plurality of insulating layers stacked on the substrate, a plurality of gate electrodes between the plurality of insulating layers, a plurality of gate insulating layers in contact with the plurality of gate electrodes, a plurality of intermediate electrodes in contact with the plurality of gate insulating layers, a ferroelectric layer in contact with the plurality of intermediate electrodes and the plurality of insulating layers, and a channel layer in contact with the ferroelectric layer.

What exactly they claim (claim 1)

1. A three-dimensional (3D) ferroelectric memory device comprising: a substrate; a plurality of insulating layers stacked on an upper surface of the substrate; a plurality of gate electrodes between the plurality of insulating layers; a plurality of gate insulating layers on corresponding side surfaces of the plurality of gate electrodes; a ferroelectric layer on side surfaces of the plurality of insulating layers; a plurality of intermediate electrodes between the plurality of gate insulating layers and the ferroelectric layer; and a channel layer on the ferroelectric layer, wherein the plurality of gate insulating layers are between the plurality of gate electrodes and the plurality of intermediate electrodes, and wherein the ferroelectric layer is between the plurality of intermediate electrodes and the channel layer.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Three-dimensional ferroelectric memory device
Patent number
US12764964B2
Application number
18491161
Filed
Oct 20, 2023
Granted
Oct 13, 2026
Inventors
4
Claims
20

Classified under

H10B 51/20 Electricity & electronicsH10B 51/10 Electricity & electronicsH10D 30/701 Electricity & electronicsH10D 64/033 Electricity & electronicsH10D 64/689 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.