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Samsung patents capacitor design with nitrogen and oxygen layers

Patent drawing
Patent drawing from the official filing.

Samsung has been granted a patent for a specific type of capacitor used inside semiconductor chips. The design features a layered structure where the top electrode includes a metal-nitrogen layer protected by a layer containing a metal, a Group 14 element, and oxygen.

Why it mattersThis is a routine improvement to the physical materials used in chip manufacturing, likely aimed at increasing the reliability or density of standard memory components.

In the filing’s own words

A semiconductor device includes a conductive pattern, and a capacitor electrically connected to the conductive pattern. The capacitor includes a first electrode structure electrically connected to the conductive pattern, a dielectric layer disposed on the first electrode structure, a second electrode structure disposed on the dielectric layer, and a plate electrode disposed on the second electrode structure. The second electrode structure includes a first electrode material layer including a first metal element and a nitrogen element, and a first protective material layer including a second metal element, a Group 14 element, and an oxygen element.

What exactly they claim (claim 1)

1. A semiconductor device comprising: a conductive pattern; and a capacitor electrically connected to the conductive pattern, wherein the capacitor comprises: a first electrode structure electrically connected to the conductive pattern; a dielectric layer disposed on the first electrode structure; a second electrode structure disposed on the dielectric layer; and a plate electrode disposed on the second electrode structure, wherein the second electrode structure comprises: a first electrode material layer including a first metal element and a nitrogen element; and a first protective material layer including a second metal element, a Group 14 element, and an oxygen element, wherein the first metal element and the second metal element are a same element.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Semiconductor device
Patent number
US12764932B2
Application number
18494449
Filed
Oct 25, 2023
Granted
Oct 13, 2026
Inventors
5
Claims
20

Classified under

H10B 12/315 Electricity & electronicsH10B 12/033 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.