Samsung patents laser method to build better memory chips
Samsung describes a way to make computer memory chips using a laser to heat and solidify a layer of silicon. The process uses a special reflective coating that changes how the laser heats different parts of the chip to ensure the silicon turns into the right crystal structure.
In the filing’s own words
A method may include forming a first gate structure on a first region of a substrate, forming a bit line structure on the first gate structure, forming a preliminary contact plug layer including amorphous silicon on the substrate, forming a reflective layer structure on the preliminary contact plug layer, forming a contact plug layer from the preliminary contact plug layer, and forming a capacitor on the contact plug layer. The reflective layer structure may include first and second reflective layers. A refractive index of the second reflective layer may be being greater than that of the first reflective layer. Portions of the second reflective layer may have different thicknesses on first and second regions of the substrate. The forming the contact plug layer may include performing a melting laser annealing (MLA) process on the reflective layer structure to convert the amorphous silicon of the preliminary contact plug layer into polysilicon.
What exactly they claim (claim 1)
1. A method of manufacturing a semiconductor device, the method comprising: forming a first gate structure on a first region of a substrate, the substrate including the first region and a second region; forming a bit line structure on the first gate structure; forming a preliminary contact plug layer including amorphous silicon on the substrate; forming a reflective layer structure on the preliminary contact plug layer, the reflective layer structure including a first reflective layer having a first refractive index and a second reflective layer having a second refractive index, the second refractive index being greater than the first refractive index, and a thickness of a portion of the second reflective layer on the first region of the substrate being different than a thickness of a portion of the second reflective layer on the second region of the substrate; forming a contact plug layer from the preliminary contact plug layer, the forming the contact plug layer including performing a melting laser annealing (MLA) process of irradiating a laser on the reflective layer structure so that the amorphous silicon of the preliminary contact plug layer is converted into polysilicon; and forming a capacitor on the contact plug layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Method of manufacturing a semiconductor device
- Patent number
- US12764925B2
- Application number
- 18636744
- Filed
- Apr 16, 2024
- Granted
- Oct 13, 2026
- Inventors
- 9
- Claims
- 20
Classified under
H10B 12/03 Electricity & electronicsH10B 12/09 Electricity & electronicsH10B 12/315 Electricity & electronicsH10B 12/482 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.