Samsung patents memory circuit that moves data between buffer units
Samsung has been granted a patent for a specific design of a page buffer circuit used in memory chips. The invention describes how data is transferred between different buffer units using pass transistors during a specific time period to manage data flow.
In the filing’s own words
A memory device includes a memory cell array including memory cells and a page buffer circuit including page buffer units respectively connected to the memory cells through a plurality of bit lines and cache latches respectively corresponding to the page buffer units, each of the page buffer units including a main latch and a pass transistor, each connected to a corresponding sensing node, sensing nodes of at least first, second, and third page buffer units of the page buffer units connected to one another through pass transistors of the first, second, and third page buffer units, and a main latch of the first page buffer unit configured to perform a first data dump operation of transferring first data to a main latch of the second page buffer unit in a first time period of a data dump period.
What exactly they claim (claim 1)
1. A memory device comprising: a memory cell array including a plurality of memory cells; and a page buffer circuit including a plurality of page buffer units respectively connected to the plurality of memory cells through a plurality of bit lines and a plurality of cache latches respectively corresponding to the plurality of page buffer units, each of the plurality of page buffer units comprising a main latch and a pass transistor, each connected to a corresponding sensing node, sensing nodes of at least first, second, and third page buffer units of the plurality of page buffer units connected to one another through pass transistors of the first, second, and third page buffer units, and a main latch of the first page buffer unit configured to perform a first data dump operation of transferring first data to a main latch of the second page buffer unit in a first time period of a data dump period.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Page buffer circuit and memory device including the same
- Patent number
- US12763152B2
- Application number
- 18973603
- Filed
- Dec 9, 2024
- Granted
- Oct 13, 2026
- Inventors
- 1
- Claims
- 20
Classified under
G11C 16/26 Physics & computingG11C 16/0483 Physics & computingMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.