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Samsung patents memory chip design using variable resistors

Patent drawing
Patent drawing from the official filing.

Samsung has secured a patent for a semiconductor memory device that combines a variable resistor element with a transistor in each memory cell. The design features a substrate with connections on both sides, including a source line on the back surface to manage electrical flow.

Why it mattersThis is a routine improvement to how memory chips are physically built, potentially allowing for more efficient data storage structures.

In the filing’s own words

A semiconductor memory device includes a first memory cell including a first variable resistor element and a first cell transistor connected to the first variable resistor element through a first source-drain electrode, a substrate having a first surface connected to the second source-drain electrode of the first cell transistor and a second surface opposing the first surface, a first bitline connected to the first source-drain electrode of the first cell transistor through the first variable resistor element, and a first source line disposed on the second surface of the substrate and connected to the second source-drain electrode.

What exactly they claim (claim 1)

1. A semiconductor memory device comprising: a first memory cell comprising a first variable resistor element and a first cell transistor connected to the first variable resistor element through a first source-drain electrode; a substrate comprising a first surface connected to a second source-drain electrode of the first cell transistor and a second surface opposing the first surface; a first bitline connected to the first source-drain electrode of the first cell transistor through the first variable resistor element; a first source line having a first width, arranged on the second surface of the substrate and connected to the second source-drain electrode; and a second source line disposed on the first surface and electrically connected to the first source line.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Semiconductor memory device including memory cells
Patent number
US12763142B2
Application number
18818882
Filed
Aug 29, 2024
Granted
Oct 13, 2026
Inventors
4
Claims
20

Classified under

G11C 13/004 Physics & computingG11C 13/0026 Physics & computingG11C 2013/0054 Physics & computingH10B 61/22 Electricity & electronicsH10B 63/30 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.