Samsung patents memory chip using two gates to store data
Samsung has been granted a patent for a memory device that uses a special material called a ferroelectric layer to store information. The design features two separate gate electrodes that control the flow of electricity through a channel, allowing the device to switch between different states by applying specific voltages.
In the filing’s own words
A ferroelectric memory device may include a source, a drain, a channel layer between the source and the drain and connected to the source and the drain, a first gate electrode and a second gate electrode located on the channel layer to be spaced apart from each other, and a ferroelectric layer between the channel layer and the first gate electrode and between the channel layer and the second gate electrode. Different voltages may be applied to the first gate electrode and the second gate electrode.
What exactly they claim (claim 1)
1. A ferroelectric memory device comprising: a source; a drain; a channel layer between the source and the drain, the channel layer connected to the source and the drain; a first gate electrode on the channel layer; a second gate electrode on the channel layer and spaced apart from the first gate electrode; a ferroelectric layer, the ferroelectric layer between the channel layer and the first gate electrode, and the ferroelectric layer being between the channel layer and the second gate electrode; an insulating layer between the ferroelectric layer and the channel layer, the insulating layer being in direct contact with the ferroelectric layer; and a voltage applying unit configured to apply voltages to the first gate electrode and the second gate electrode, wherein the voltage applying unit is further configured to apply a pulse voltage to any one of the first gate electrode and the second gate electrode, and apply a direct current (DC) voltage or a different type of pulse voltage from the pulse voltage to other of the first gate electrode and the second gate electrode.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Ferroelectric memory device and electronic device including the same
- Patent number
- US12762388B2
- Application number
- 18053182
- Filed
- Nov 7, 2022
- Granted
- Oct 13, 2026
- Inventors
- 3
- Claims
- 15
Classified under
G06N 3/063 Physics & computingG11C 11/223 Physics & computingG11C 11/2255 Physics & computingG11C 11/2257 Physics & computingG11C 11/54 Physics & computingH10B 51/20 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.