Samsung patents memory tweak to slow down wear and tear
Samsung describes a method for volatile memory that runs tests to check if memory cells are aging faster than expected. If the cells show signs of reduced lifespan, the system lowers the electrical voltage used to read or write data to them. This reduced power helps preserve the remaining life of the memory cells.
In the filing’s own words
A method for extending life expectancy of a volatile memory device includes performing a life test corresponding to memory cells included in the volatile memory device, determining whether the memory cells have a normal life state or a shrink-life state indicating a life expectancy that is reduced relative to the normal life state based on a result of the life test, and decreasing a wordline voltage, which is applied to a wordline connected to the memory cells, to a first voltage that is less than a second voltage that is applied to the wordline in the normal life state during a read operation or a write operation responsive to determining that the memory cells have the shrink-life state.
What exactly they claim (claim 1)
1. A method for extending life expectancy of a volatile memory device, the method comprising: executing, by control logic that is coupled to memory cells included in the volatile memory device, operations comprising: for a first read or write operation, using a second voltage associated with a normal life state as a wordline voltage applied to a wordline connected to the memory cells; performing a life test for the memory cells included in the volatile memory device; determining whether the memory cells have the normal life state or a shrink-life state indicating a life expectancy is predicted to be reduced relative to the normal life state based on a result of the life test; and responsive to determining that the memory cells have the shrink-life state, for a second read or write operation, decreasing the wordline voltage applied to the wordline connected to the memory cells to a first voltage associated with the shrink-life state, the first voltage being less than the second voltage associated with the normal life state used for the first read or write operation.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Volatile memory device included in memory system and method for extending life expectancy thereof
- Patent number
- US12761805B2
- Application number
- 18354919
- Filed
- Jul 19, 2023
- Granted
- Oct 13, 2026
- Inventors
- 3
- Claims
- 20
Classified under
G06F 3/0616 Physics & computingG06F 3/0653 Physics & computingG06F 3/0673 Physics & computingG11C 11/4074 Physics & computingG11C 11/4096 Physics & computingMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.