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Samsung patents chemical method to clean edges of chip wafers

Samsung has been granted a patent for a specific chemical process used in manufacturing computer chips. The method involves applying two different liquid solutions to the edges of a wafer to remove excess material before the final pattern is etched into the surface.

Why it mattersThis is a routine improvement in semiconductor manufacturing that helps ensure the quality of the tiny circuits inside electronic devices.

In the filing’s own words

A method of forming patterns includes coating a metal-containing resist composition on a substrate, sequentially coating two types of compositions for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, and exposing and developing the metal-containing resist film to form a resist pattern; or coating a metal-containing resist composition on a substrate, coating a composition for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, exposing the metal-containing resist film, and developing with a developing solution composition to form a resist pattern, wherein details of the two types of compositions for removing edge beads and the developing solution composition are as described in the specification.

What exactly they claim (claim 1)

1. A method of forming patterns, comprising: coating a metal-containing resist composition on a substrate; sequentially coating two different compositions for removing edge beads along an edge of the substrate; performing a heat-treatment comprising drying and heating to form a metal-containing resist film on the substrate; and exposing and developing the metal-containing resist film to form a resist pattern, wherein the two different compositions for removing edge beads each independently comprise: Composition A comprising a phosphorous acid-based compound and an organic solvent; or Composition B comprising a glycol ether or ester thereof, an ester of hydroxy acid or an ester of alkyl ether acid, and an ester of carboxylic acid, wherein at least one of the two different compositions for removing edge beads comprises Composition A, wherein Composition A does not include ethylenediamine tetramethylene phosphonic acid, and wherein the phosphorous acid-based compound is at least one of phosphonic acid, methyl phosphonic acid, ethyl phosphonic acid, butyl phosphonic acid, hexyl phosphonic acid, n-octyl phosphonic acid, tetradecyl phosphonic acid, octadecyl phosphonic acid, phenyl phosphonic acid, vinyl phosphonic acid, aminomethyl phosphonic acid, methylenediamine tetramethylene phosphonic acid, 1-amino 1-phosphonooctyl phosphonic acid, etidronic acid, 2-aminoethyl phosphonic acid, 3-aminopropyl phosphonic acid, 6-hydroxyhexyl phosphonic acid, decyl phosphonic acid, methylene diphosphonic acid, nitrilotrimethylene triphosphonic acid, 1H, 1H,2H,2H-perfluorooctanephosphonic acid, or a combination thereof.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Method of forming patterns
Patent number
US12761551B2
Application number
18061859
Filed
Dec 5, 2022
Granted
Oct 13, 2026
Inventors
11
Claims
9

Classified under

G03F 7/0042 Physics & computingG03F 7/162 Physics & computingG03F 7/168 Physics & computingG03F 7/325 Physics & computing
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.