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Samsung patents memory chip design with layered protective coating

Patent drawing
Patent drawing from the official filing.

Samsung has been granted a patent for a semiconductor device, likely a type of memory chip, that features a specific arrangement of vertical channels and gate layers. The design includes a protective passivation layer made of two parts: one with a high concentration of a protective element and another with a lower concentration.

Why it mattersThis filing describes a specific structural improvement to memory chips that could help protect internal components, though it does not indicate a new consumer product.

In the filing’s own words

Provided is a semiconductor device including a semiconductor substrate, a gate stack including a plurality of gate layers and a plurality of insulation layers alternately stacked on the semiconductor substrate, a plurality of first channel structures penetrating through the gate stack and extending in a vertical direction, a word line cut penetrating through the gate stack and extending in the vertical direction, a passivation layer disposed on the gate stack, and a string select line stack disposed on the passivation layer, wherein the passivation layer includes a first passivation layer containing a passivation element and a second passivation layer having a smaller content of the passivation element than the first passivation layer.

What exactly they claim (claim 1)

1. A semiconductor device comprising: a semiconductor substrate; a gate stack comprising a plurality of gate layers and a plurality of insulation layers alternately stacked on the semiconductor substrate; a plurality of first channel structures penetrating through the gate stack and extending in a vertical direction; a word line cut penetrating through the gate stack and extending in the vertical direction; a passivation layer disposed on the gate stack; and a string select line stack disposed on the passivation layer, wherein the passivation layer comprises a first passivation layer containing a passivation element and a second passivation layer having a smaller content of the passivation element than the first passivation layer.

Facts

Company
Samsung (Samsung Electronics Co., Ltd.)
Official title
Semiconductor device
Patent number
US12757782B2
Application number
18640201
Filed
Apr 19, 2024
Granted
Oct 6, 2026
Inventors
6
Claims
20

Classified under

H10W 74/137 Electricity & electronicsH10B 12/485 Electricity & electronicsH10B 12/488 Electricity & electronicsH10W 20/42 Electricity & electronicsH10W 74/43 Electricity & electronics

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.