Samsung patents chip stacking method using matched metal pads
Samsung has been granted a patent for a method of stacking two semiconductor layers together. The design uses metal pads with specific grain sizes and matching surface areas to ensure a tight, reliable connection between the upper and lower chip structures.
In the filing’s own words
A semiconductor device may include a lower structure including a first substrate, a first pad on the first substrate, and a first insulating layer enclosing the first pad, and an upper structure including a second substrate, a second pad on the second substrate, and a second insulating layer enclosing the second pad. Each of the first and second pads may include a first portion and a second portion on the first portion. The second portion may include the same metallic material as the first portion. The second portion of the first pad may be in contact with the second portion of the second pad, and the first insulating layer may be in contact with the second insulating layer.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a lower structure including a first substrate, a first pad on the first substrate, and a first insulating layer enclosing the first pad; and an upper structure including a second substrate, a second pad on the second substrate, and a second insulating layer enclosing the second pad, wherein each of the first and second pads comprises a first portion and a second portion on the first portion, wherein an area of a surface of the second portion that faces the first portion is the same as an area of a surface of the first portion that faces the second portion, wherein, in each of the first and second pads, a grain size of the first portion is larger than a grain size of the second portion, wherein the second portion comprises the same metallic material as the first portion, wherein the second portion of the first pad is in contact with the second portion of the second pad, and wherein the first insulating layer is in contact with the second insulating layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Semiconductor device and method of fabricating the same
- Patent number
- US12757777B2
- Application number
- 18120026
- Filed
- Mar 10, 2023
- Granted
- Oct 6, 2026
- Inventors
- 3
- Claims
- 18
Classified under
H10W 72/20 Electricity & electronicsH10W 72/012 Electricity & electronicsH10W 99/00 Electricity & electronicsH10W 72/01238 Electricity & electronicsH10W 72/234 Electricity & electronicsH10W 72/252 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.