Samsung patents chip design with wires running through the back of the silicon
This patent describes a semiconductor structure where electrical connections pass through layers of insulation to reach a wire buried inside the main silicon substrate. The design links this internal wire to a circuit on the opposite side of the chip, allowing for different routing paths.
In the filing’s own words
A semiconductor device may include: a substrate including a first side and a second side; an active pattern that is on the first side and extends in a first direction; an etch stop layer that extends along the first side and does not extend along side faces of the active pattern; a field insulating film that is on the first side and covers at least a part of the side faces of the active pattern; a gate structure that extends in a second direction on the active pattern and the field insulating film; a through contact that extends in a third direction and penetrates the field insulating film and the etch stop layer; a buried pattern connected to the through contact, inside the substrate; and a backside wiring structure that is on the second side and electrically connected to the buried pattern.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a substrate comprising a first side and a second side opposite to the first side; an active pattern that is on the first side and extends in a first direction; an etch stop layer that extends along the first side of the substrate and does not extend along side faces of the active pattern; a field insulating film that is on the first side and covers at least a part of the side faces of the active pattern; a gate structure that extends in a second direction intersecting the first direction on the active pattern and the field insulating film; a through contact that extends in a third direction intersecting the first direction and the second direction and penetrates the field insulating film and the etch stop layer; a buried pattern connected to the through contact, inside the substrate; and a backside wiring structure that is on the second side and electrically connected to the buried pattern.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device having a through contact connected to a buried pattern and penetrating a field insulation film and an etch stop layer
- Patent number
- US12757719B2
- Application number
- 18367851
- Filed
- Sep 13, 2023
- Granted
- Oct 6, 2026
- Inventors
- 1
- Claims
- 20
Classified under
H10W 20/427 Electricity & electronicsH10D 30/014 Electricity & electronicsH10D 30/43 Electricity & electronicsH10D 30/6729 Electricity & electronicsH10D 30/6735 Electricity & electronicsH10D 62/121 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.