Samsung patents magnetic memory layer that boosts data reading accuracy
Samsung has been granted a patent for a specific structure used in magnetic random access memory (MRAM). The design uses a multi-layered base made of tungsten-aluminum and other alloys to guide the formation of a magnetic material called a Heusler compound. This setup helps the magnetic layer stand upright, which improves the signal strength when the memory reads data.
In the filing’s own words
A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and an MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a multi-layer templating structure that includes a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack. The first magnetic layer is formed over the multi-layer templating structure. The multi-layer templating structure includes a layer of a first binary alloy including tungsten-aluminum (WAl), and a layer of a second binary alloy having a cesium-chloride (CsCl) structure. The second binary alloy overlays the first binary alloy.
What exactly they claim (claim 1)
1. A magnetic random access memory (MRAM) stack comprising: a first magnetic layer comprising a Heusler compound having perpendicular magnetic anisotropy; and one or more seed layers comprising: a multi-layer templating structure comprising a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack through enhancement of spin polarization of the Heusler compound by improvement of chemical ordering and crystallinity of the Heusler compound, wherein the first magnetic layer is formed over the multi-layer templating structure, the multi-layer templating structure comprising: a first layer comprising a binary alloy having a cesium-chloride (CsCl) structure; a layer of a first binary alloy comprising tungsten-aluminum (WAI); and a second layer comprising a second binary alloy having a cesium-chloride (CsCl) structure formed over the WAl layer, wherein the second layer comprising the second binary alloy having the CsCl structure is configured to induce tetragonal distortion of the Heusler compound such that magnetization of the first magnetic layer is oriented perpendicular to a film plane of the first magnetic layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films
- Patent number
- US12757639B2
- Application number
- 18179588
- Filed
- Mar 7, 2023
- Granted
- Oct 6, 2026
- Inventors
- 5
- Claims
- 25
Classified under
H10N 50/80 Electricity & electronicsH10B 61/00 Electricity & electronicsH10N 50/01 Electricity & electronicsH10N 50/20 Electricity & electronicsH10N 50/85 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.