Samsung patents vertical transistor design using silicide buffer layer
Samsung has been granted a patent for a semiconductor device structure that stacks components vertically on a chip. The design places a silicide material buffer between a metal oxide layer and an oxide channel to improve the connection between the transistor's parts.
In the filing’s own words
Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a substrate; a lower electrode on the substrate; a metal oxide on the lower electrode; a first buffer on the metal oxide; an oxide channel on the first buffer; a gate insulating layer contacting the oxide channel; a gate electrode contacting the gate insulating layer; and an upper electrode on the oxide channel, wherein the first buffer is between the metal oxide and the oxide channel, the first buffer includes a silicide material, the upper electrode and the lower electrode are spaced apart from each other in a perpendicular direction that is perpendicular to the substrate, and a longitudinal direction of the oxide channel is perpendicular to the substrate.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Semiconductor device and method of manufacturing the same
- Patent number
- US12757472B2
- Application number
- 18481444
- Filed
- Oct 5, 2023
- Granted
- Oct 6, 2026
- Inventors
- 5
- Claims
- 15
Classified under
H10D 64/62 Electricity & electronicsH10D 30/6728 Electricity & electronicsH10D 30/6755 Electricity & electronicsH10D 30/6757 Electricity & electronicsH10D 64/011 Electricity & electronicsH10D 99/00 Electricity & electronicsMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.