Samsung patents transistor using mixed ferroelectric gate material
Samsung describes a field effect transistor where the gate insulating layer has two distinct sections: one dominated by a ferroelectric crystal structure and another by a non-ferroelectric structure. The gate electrode above these sections has different thicknesses to match the underlying material properties.
In the filing’s own words
A field effect transistor includes a source region, a drain region, a channel between the source region and the drain region, a gate insulating layer configured to cover an upper surface of the channel, and a gate electrode configured to cover an upper surface of the gate insulating layer. The gate insulating layer includes a first region where a ferroelectric crystal structure is dominant and a second region where a non-ferroelectric structure is dominant. The gate electrode includes a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region of the gate insulating layer.
What exactly they claim (claim 1)
1. A field effect transistor, comprising: a source region; a drain region; a channel between the source region and the drain region; a gate insulating layer configured to cover an upper surface of the channel; and a gate electrode configured to cover an upper surface of the gate insulating layer, wherein the gate insulating layer includes a first region where a ferroelectric crystal structure is dominant, and a second region where a non-ferroelectric structure is dominant, wherein the gate electrode includes a first pattern region facing the first region of the gate insulating layer, and a second pattern region facing the second region of the gate insulating layer, and wherein the first pattern region includes a first thickness in a first direction transverse to the upper surface of the gate insulating layer and the second pattern region includes a second thickness in the first direction, the second thickness different from the first thickness.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Field effect transistor, capacitor, and electronic apparatus including domain-controlled ferroelectric material
- Patent number
- US12757449B2
- Application number
- 18495220
- Filed
- Oct 26, 2023
- Granted
- Oct 6, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10D 30/701 Electricity & electronicsH10B 12/31 Electricity & electronicsH10D 1/692 Electricity & electronicsH10D 30/0415 Electricity & electronicsH10D 64/689 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.