Samsung patents triangular support shapes for vertical memory chips
Samsung has been granted a patent for a semiconductor design that uses triangular support structures to hold up vertical memory channels. The filing describes arranging these supports in a staggered pattern where the points of adjacent triangles do not line up directly, creating a specific geometric layout within the chip.
In the filing’s own words
A semiconductor device includes a gate electrode structure including gate electrodes spaced apart in a first direction perpendicular to an upper surface of a substrate, each gate electrode extending in a second direction parallel to the upper surface of the substrate, a memory channel structure, and a support pattern array including support patterns spaced apart in the second direction and a third direction crossing the second direction, wherein each support pattern has a shape including three vertices and three sides, and wherein a first vertex of a first support pattern closest to a second support pattern and a first vertex of the second support pattern closest to the first support pattern are not aligned in the third direction but have different positions in the second direction.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a gate electrode structure including gate electrodes on a substrate, the gate electrodes being spaced apart from each other in a first direction substantially perpendicular to an upper surface of the substrate, each of the gate electrodes extending in a second direction substantially parallel to the upper surface of the substrate; a memory channel extending through the gate electrode structure on the substrate; and a support pattern array including support patterns, each of the support patterns extending through the gate electrode structure in the first direction, the support patterns spaced apart from each other in the second direction and a third direction substantially parallel to the upper surface of the substrate and crossing the second direction, wherein each of the support patterns has a shape including three vertices and three sides that connect the three vertices in a plan view to form a triangle, and at least one of the three sides is a convex curve toward an outside of the triangle, wherein the support pattern array includes a first support pattern and a second support pattern adjacent to each other in the third direction, and wherein a first vertex among the three vertices of the first support pattern that is closest to the second support pattern and a first vertex among the three vertices of the second support pattern that is closest to the first support pattern are not aligned in the third direction but have different positions from each other in the second direction.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Vertical memory devices
- Patent number
- US12757401B2
- Application number
- 18616343
- Filed
- Mar 26, 2024
- Granted
- Oct 6, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10B 43/27 Electricity & electronicsH10B 41/27 Electricity & electronicsH10B 43/10 Electricity & electronicsH10B 43/40 Electricity & electronicsH10B 43/50 Electricity & electronicsH10W 42/121 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.