Samsung patents memory layer that helps magnetic bits stand upright
Samsung has been granted a patent for a specific structure used in magnetic random-access memory (MRAM). The design adds a thin chemical layer made of iron and other elements between the tunnel barrier and the magnetic top layer. This template helps the magnetic material align vertically, which is essential for the memory to work correctly.
In the filing’s own words
A magnetic random-access memory (MRAM) device includes a substrate, a bottom magnetic reference layer on the substrate, a tunnel barrier layer above the bottom magnetic reference layer, and a top magnetic free layer above the tunnel barrier layer. The top magnetic free layer includes a chemical templating layer on the tunnel barrier layer and a magnetic layer on the chemical templating layer. The chemical templating layer includes a binary alloy of Fe y X which may have a BiF 3 prototype structure in which y is in a range from 0.9 to 3.3, and the magnetic layer includes a Heusler compound having substantially perpendicular magnetic anisotropy.
What exactly they claim (claim 1)
1. A magnetic random-access memory (MRAM) device comprising: a substrate; a bottom magnetic reference layer above the substrate; a tunnel barrier layer above the bottom magnetic reference layer; and a top magnetic free layer above the tunnel barrier layer, the top magnetic free layer comprising: a chemical templating layer on the tunnel barrier layer, the chemical templating layer comprising a binary alloy of Fe y X, wherein y is in a range from 0.9 to 3.3; and a magnetic layer on the chemical templating layer, the magnetic layer comprising a Heusler compound having substantially perpendicular magnetic anisotropy.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier
- Patent number
- US12755770B2
- Application number
- 18348087
- Filed
- Jul 6, 2023
- Granted
- Oct 6, 2026
- Inventors
- 5
- Claims
- 20
Classified under
G11C 11/161 Physics & computingH01F 10/3272 Electricity & electronicsH01F 10/3286 Electricity & electronicsH10B 61/00 Electricity & electronicsH10N 50/01 Electricity & electronicsH10N 50/10 Electricity & electronicsMore from Samsung in Chips & hardware
- Samsung patents chip that combines camera and screen Oct 13, 2026
- Samsung patents faster chip testing using machine learning Sep 1, 2026
- Samsung patents radar method to pinpoint target direction more accurately Sep 1, 2026
- Samsung patents memory chip that searches data by content, not address Sep 1, 2026
- Samsung patents chip design that skips empty data to speed up AI Sep 1, 2026
Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.