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Samsung patents storage system that picks memory zones based on wear

Patent drawing
Patent drawing from the official filing.

Samsung has patented a storage system that manages how data is written to non-volatile memory. The controller selects which memory zone to open for a device based on how much the existing zones have been read from and written to, as well as their overall wear level.

Why it mattersThis technique helps extend the lifespan of storage chips by balancing usage across different memory blocks, which is a standard improvement for internal hardware management.

In the filing’s own words

The present disclosure provides a storage system including: a non-volatile memory configured to include a plurality of memory blocks and a storage controller. The storage controller is configured to receive a zone open request from a host, and to open a second zone to the host including a plurality of second memory blocks among the plurality of memory blocks based on read and write count information of a first zone including a plurality of first memory blocks among the plurality of memory blocks and based on a wear level of the plurality of memory blocks.

What exactly they claim (claim 1)

1. A storage system comprising: a non-volatile memory configured to include a plurality of memory blocks, wherein the plurality of memory blocks includes a first zone comprising a first subset of memory blocks of the plurality of memory blocks and a second zone comprising a second subset of memory blocks of the plurality of memory blocks; and a storage controller configured to receive a zone open request from a host, open the second zone to the host based on read and write count information of the first zone corresponding to the host and based on a wear level of the plurality of memory blocks, wherein the second zone includes first memory blocks that are less deteriorated than a predetermined memory block of the plurality of memory blocks based on a read count of the first zone being less than a write count of the first zone, or the second zone includes second memory blocks that are more deteriorated than a predetermined memory block of the plurality of memory blocks based on the read count of the first zone being greater than the write count of the first zone.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Storage system and operating method thereof
Patent number
US12754836B2
Application number
19038524
Filed
Jan 27, 2025
Granted
Oct 6, 2026
Inventors
4
Claims
20

Classified under

G06F 12/0246 Physics & computingG06F 2212/7211 Physics & computing

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.