Samsung patents vertical chip design with mixed metal layers

1. A vertical semiconductor device, comprising: insulation patterns that are spaced apart from each other in a vertical direction perpendicular to an upper surface of a substrate, each of the insulation patterns extending in a first direction parallel to the upper surface of the substrate; channel structures on the substrate, the channel structures passing through the insulation patterns, the channel structures including first channel structures and second channel structures; a first metal pattern structure including at least one first metal material, and comprising a continuous portion of the first metal pattern structure having an elongated shape extending in the first direction, wherein the first metal pattern structure is located between adjacent insulation patterns of the insulation patterns in the vertical direction; and a second metal pattern including a metal material that is different from the at least one first metal material, the second metal pattern on opposite outer sidewalls of the elongated shape of the continuous portion of the first metal pattern structure in a second direction perpendicular to the first direction and parallel to the upper surface of the substrate, such that the continuous portion of the first metal pattern structure is between and in contact with separate portions of the second metal pattern in the second direction, wherein the first metal pattern structure contacts only the first channel structures among the first channel structures and the second channel structures, wherein, in a cross-sectional view of the first metal pattern structure and the second metal pattern taken along the second direction: a third channel structure, a fourth channel structure, and a fifth channel structure of the channel structures are arranged in sequence, the second metal pattern is between the third channel structure and the fourth channel structure, and between the fourth channel structure and the fifth channel structure, and the first metal pattern structure is present between the fourth channel structure and the fifth channel structure and absent between the third channel structure and the fourth channel structure.