Samsung patents image sensor design with layered trenches
Samsung has been granted a patent for an image sensor layout that uses both deep and shallow trenches to separate pixel areas. The design places these trenches between specific ground regions to manage electrical connections within the sensor's substrate.
In the filing’s own words
An image sensor comprises a substrate that comprises a first surface, a second surface facing the first surface, and a plurality of pixel regions disposed along a first direction and a second direction. The sensor comprises a plurality of ground regions that are disposed within a portion of the substrate along a depth direction perpendicular to the first direction and the second direction from the first surface of the substrate. The sensor comprises a deep trench that extends from the first surface of the substrate to the second surface of the substrate. The sensor comprises a shallow trench that extends into the portion of the substrate along the depth direction from the first surface of the substrate and is disposed at an outer edge of at least a portion of the deep trench.
What exactly they claim (claim 1)
1. An image sensor comprising: a substrate comprising: a first surface; a second surface facing the first surface; and a plurality of pixel regions disposed along a first direction and a second direction different from the first direction; and a plurality of ground regions that are disposed within a portion of the substrate along a depth direction perpendicular to the first direction and the second direction from the first surface of the substrate; a deep trench that extends from the first surface of the substrate to the second surface of the substrate and defines the plurality of pixel regions within the substrate; and a shallow trench that extends into the portion of the substrate along the depth direction from the first surface of the substrate and is disposed at an outer edge of at least a portion of the deep trench, the shallow trench having a depth that is less than a depth of the deep trench; wherein on a plane where the first direction and the second direction intersect, the deep trench and the shallow trench are disposed between two ground regions of the plurality of ground regions disposed along the first direction and the deep trench is disposed between two ground regions of the plurality of ground regions disposed along the second direction.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Image sensor and manufacturing method of image sensor
- Patent number
- US12751101B2
- Application number
- 18426734
- Filed
- Jan 30, 2024
- Granted
- Sep 29, 2026
- Inventors
- 4
- Claims
- 10
Classified under
H10F 39/807 Electricity & electronicsH10F 39/014 Electricity & electronicsH10F 39/18 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.