Samsung patents transistor design using indium layers to improve semiconductor performance
Samsung describes a semiconductor device structure where a buffer layer containing a high amount of indium sits between an electrode and an oxide semiconductor layer. The filing specifies that the indium content in this buffer layer is higher than in the semiconductor layer itself, with specific variations in indium concentration across different areas of the device.
In the filing’s own words
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a lower electrode provided on a substrate, a buffer layer provided on the lower electrode and including first indium, an oxide semiconductor layer provided on the buffer layer and including second indium, a gate electrode provided apart from the oxide semiconductor layer, and an upper electrode provided on the oxide semiconductor layer, wherein a content of the first indium is greater than a content of the second indium.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a substrate; a lower electrode on the substrate; a first buffer layer on the lower electrode, the first buffer layer including first indium; an oxide semiconductor layer on the first buffer layer, the oxide semiconductor layer including second indium; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; and an upper electrode on the oxide semiconductor layer, wherein a content of the first indium in the first buffer layer is greater than a content of the second indium in the oxide semiconductor layer, wherein the first buffer layer is between the lower electrode and the oxide semiconductor layer, wherein the upper electrode and the lower electrode are spaced apart from each other in a perpendicular direction extending perpendicular to the substrate, wherein the oxide semiconductor layer includes a first area and a second area, wherein a distance from the first area of the oxide semiconductor layer to the first buffer layer is smaller than a distance from the second area of the oxide semiconductor layer to the first buffer layer, and wherein a content of the second indium in the first area of the oxide semiconductor layer is greater than a content of the second indium in the second area of the oxide semiconductor layer.
Facts
- Company
- Samsung (Samsung Electronics Co., Ltd.)
- Official title
- Semiconductor device and method of manufacturing the same
- Patent number
- US12751050B2
- Application number
- 18479428
- Filed
- Oct 2, 2023
- Granted
- Sep 29, 2026
- Inventors
- 5
- Claims
- 26
Classified under
H10D 30/6755 Electricity & electronicsH10D 30/031 Electricity & electronicsH10D 30/673 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.