Samsung patents memory chip using ferroelectric material to store data
Samsung has been granted a patent for a semiconductor device that uses a ferroelectric layer surrounding the channel of a memory cell. This design includes a dummy pattern to separate the ferroelectric material from the underlying conductive layer, helping to manage how the chip stores and retrieves information.
In the filing’s own words
The present disclosure relates to a semiconductor device and a data storage system including the device. The semiconductor device has a substrate including a cell array region and a contact region. In the cell array region the semiconductor device has a first horizontal conductive layer, a gate stacking structure including a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. A channel structure extends in a direction crossing into the substrate by penetrating the gate stacking structure in the cell array region, and includes a channel layer connected to the substrate. Surrounding the channel layer is a ferroelectric layer. The first horizontal conductive layer is not in direct contact with the channel layer due to a dummy pattern positioned on the first horizontal conductive layer and disposed between the substrate and the ferroelectric layer.
What exactly they claim (claim 1)
1. A semiconductor device comprising: a substrate including a cell array region and a contact region and having a first horizontal conductive layer, a gate stacking structure including a plurality of interlayer insulating layers and a plurality of gate electrodes that are alternately stacked on the substrate, a channel structure extending in a first direction crossing the substrate and extending through the gate stacking structure in the cell array region, the channel structure having a channel layer connected to the substrate and a ferroelectric layer surrounding the channel layer, and a dummy pattern positioned on the first horizontal conductive layer and disposed between the substrate and the ferroelectric layer.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device and method for manufacturing the same, and electronic system including semiconductor device
- Patent number
- US12751015B2
- Application number
- 18588712
- Filed
- Feb 27, 2024
- Granted
- Sep 29, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10B 51/20 Electricity & electronicsH10B 51/30 Electricity & electronicsH10B 51/40 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.