Samsung patents chip layout that shares a single connection point
Samsung describes a design for a tiny switch inside a computer chip that uses a shared connection point for multiple components. The layout arranges the parts in an L-shape to save space on the silicon surface.
In the filing’s own words
An integrated circuit device includes a substrate including an active region including a central active region, base active regions and extended active regions integrated together and defined by a device isolation film. A drain region is located in the central active region, and source regions are respectively located in the base active regions. The base active regions are spaced apart from each other in different diagonal directions with respect to the central active region in a plan view. The extended active regions each have an L-shape, connect the central active region and the base active regions, and are spaced apart from each other. Gate structures that respectively cross the base active regions and are spaced apart from each other on the substrate. The central active region, the extended active regions, the base active regions, and the gate structures configure pass transistors, and the pass transistors share the drain region.
What exactly they claim (claim 1)
1. An integrated circuit device comprising: a substrate including an active region comprising a central active region, at least two base active regions and at least two extended active regions that are integrated together and defined by a device isolation film, a drain region being located in the central active region, source regions being respectively located in the at least two base active regions, the at least two base active regions being spaced apart from each other in different diagonal directions with respect to the central active region in a plan view, wherein the at least two extended active regions each have an L-shape, connect the central active region and the at least two base active regions, and are spaced apart from each other; and at least two gate structures that respectively cross the at least two base active regions, extend in a first horizontal direction, and are spaced apart from each other on the substrate, wherein the central active region, the at least two extended active regions, the at least two base active regions, and the at least two gate structures configure at least two pass transistors, and the at least two pass transistors share the drain region.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Integrated circuit device and electronic system including the same
- Patent number
- US12751006B2
- Application number
- 18602778
- Filed
- Mar 12, 2024
- Granted
- Sep 29, 2026
- Inventors
- 5
- Claims
- 20
Classified under
H10B 41/35 Electricity & electronicsG11C 16/0483 Physics & computingH10B 41/10 Electricity & electronicsH10B 41/27 Electricity & electronicsH10B 41/41 Electricity & electronicsH10B 80/00 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.