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Samsung patents image sensor with uneven doping for better pixel control

Samsung has been granted a patent for an image sensor design that uses a specific layout in its pixel structure. The invention involves a transfer transistor with two sections that have different levels of impurities, known as doping, to manage how electrical charges move within the pixel.

Why it mattersThis is a technical improvement to camera hardware that helps manage charge flow, which is a standard part of refining image sensor performance.

In the filing’s own words

Provided is an image sensor including a pixel including a photoelectric device configured to generate photoelectric charges, a charge storage connected to the photoelectric device and configured to store the photoelectric charges, a driving transistor configured to generate a pixel signal based on a voltage from a first node connected to the photoelectric device, a transfer transistor including a vertical transfer gate connected between the first node and a second node, a first region at a first side of the transfer transistor and doped with a first doping concentration, and a second region at a second side of the transfer transistor and doped with a second doping concentration that is different from the first doping concentration, an overflow transistor between the second node and the charge storage element, and a row driver connected to the pixel and configured to control the pixel.

What exactly they claim (claim 1)

1. An image sensor comprising: a pixel comprising: a photoelectric device configured to generate photoelectric charges; a charge storage connected to the photoelectric device and configured to store the photoelectric charges; a driving transistor configured to generate a pixel signal based on a voltage from a first node connected to the photoelectric device; a transfer transistor comprising: a vertical transfer gate connected between the first node and a second node, a first region at a first side of the transfer transistor and doped with a first doping concentration; and a second region at a second side of the transfer transistor and doped with a second doping concentration that is different from the first doping concentration; an overflow transistor between the second node and the charge storage element; and a row driver connected to the pixel and configured to control the pixel.

Facts

Company
Samsung (SAMSUNG ELECTRONICS CO., LTD.)
Official title
Image sensor and driving method thereof
Patent number
US12750605B2
Application number
18980165
Filed
Dec 13, 2024
Granted
Sep 29, 2026
Inventors
1
Claims
20

Classified under

H04N 25/77 Electricity & electronicsH10F 39/182 Electricity & electronicsH10F 39/8033 Electricity & electronicsH10F 39/80373 Electricity & electronicsH10F 39/8053 Electricity & electronicsH10F 39/8063 Electricity & electronics
Read the full filing (official PDF) ↗ Open in the Patent Tracker

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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.