Samsung patents chip design using special material to prevent oxidation
Samsung describes a semiconductor structure where a specific material is added to the chip to stop it from reacting with oxygen. This material is introduced during a high-heat step in the manufacturing process and is concentrated in the areas connecting the chip's internal parts to its backside wiring.
In the filing’s own words
A semiconductor device includes a substrate having a front surface including an active region and a rear surface opposite to the front surface. An active pattern is on the active region. A gate structure extends in a second direction on the active region. Source/drain regions are disposed on the active pattern on both sides of the gate structure. A front interconnection structure is disposed on the gate structure and the source/drain regions. A rear interconnection structure is disposed on the rear surface of the substrate. A target region defined by the source/drain regions and the active pattern includes a non-oxidizing material at a first concentration. The non-oxidizing material is injected during a high-pressure heat treatment process. A rear interconnection region defined by the substrate, the rear through-structure, and the rear interconnection structure includes the non-oxidizing material at a second concentration higher than the first concentration.
What exactly they claim (claim 1)
1. A semiconductor device, comprising: a substrate having a front surface having an active region and a rear surface opposite to the front surface; an active pattern extending in a first direction on the active region of the substrate; a gate structure extending in a second direction on the active region of the substrate, the gate structure crossing the active pattern; source/drain regions disposed on the active pattern on both sides of the gate structure; a front interconnection structure disposed on the gate structure and the source/drain regions, the front interconnection structure is electrically connected to the gate structure; a rear interconnection structure disposed on the rear surface of the substrate, the rear interconnection structure is electrically connected to the source/drain regions; a first contact plug electrically connecting the gate structure and the front interconnection structure to each other; a second contact plug disposed between the source/drain regions and the front interconnection structure, the second contact plug electrically connected to the source/drain regions; and a rear through-structure extending in a third direction perpendicular to the rear surface of the substrate, the rear through-structure electrically connecting the second contact plug and the rear interconnection structure to each other, wherein a target region defined by the source/drain regions and the active pattern includes a non-oxidizing material at a first concentration, the non-oxidizing material is injected during a high-pressure heat treatment process; a rear interconnection region defined by the substrate, the rear through-structure, and the rear interconnection structure includes the non-oxidizing material at a second concentration higher than the first concentration.
Facts
- Company
- Samsung (SAMSUNG ELECTRONICS CO., LTD.)
- Official title
- Semiconductor device comprising non-oxidizing material
- Patent number
- US12745618B2
- Application number
- 18382545
- Filed
- Oct 23, 2023
- Granted
- Sep 22, 2026
- Inventors
- 4
- Claims
- 20
Classified under
H10W 20/20 Electricity & electronicsH10D 30/43 Electricity & electronicsH10D 30/6729 Electricity & electronicsH10D 30/6735 Electricity & electronicsH10D 30/6757 Electricity & electronicsH10D 62/121 Electricity & electronicsMore from Samsung in Chips & hardware
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Summaries are simplified from the filing’s own abstract and first claim. A patent filing is not a product announcement.
Patent data and drawings: U.S. Patent and Trademark Office (USPTO). Nebula is not affiliated with or endorsed by the USPTO.